Substrate orientation and surface morphology of GaAs liquid phase epitaxial layers

JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE

1970 • 586 citations

Morphological stability

1968 • 175 citations

DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2

1970 • 147 citations

The growth and properties of LPE GaAs

1972 • 74 citations

Thin solution multiple layer epitaxy

1972 • 70 citations

Improved surface quality of solution grown GaAs and Pb1−xSnxTe epitaxial layers: A new technique

1972 • 54 citations

Surface morphology of liquid-phase epitaxial layers

1973 • 43 citations

Some observations of the surface morphologies of GaAs layers grown by liquid phase epitaxy

1973 • 37 citations

A new technique for liquid phase epitaxy

1970 • 34 citations

Growth of Smooth Uniform Epitaxial Layers by Liquid-Phase-Epitaxial Method

1972 • 33 citations

Arseniure de gallium de haute mobilite obtenu par epitaxie en phase liquide

1968 • 29 citations

The liquid phase epitaxy of Al_xGa_1-xAs for monolithic planar structures

1971 • 28 citations

A temperature gradient cell for liquid phase epitaxial growth of GaAs

1972 • 27 citations

Isothermal Solution Mixing Growth of Thin Ga[sub 1−x]Al[sub x]As Layers

1971 • 25 citations

Improved boat for multiple-bin liquid phase epitaxy

1973 • 13 citations