Surface electronic bands of GaAs(110) determined by angle-resolved inverse photoemission

Surface States and Rectification at a Metal Semi-Conductor Contact

1947 • 2,044 citations

Heterojunctions and Metal Semiconductor Junctions

1972 • 1,065 citations

Angle-resolved photoemission, valence-band dispersions<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>E</mml:mi><mml:mo>(</mml:mo><mml:mrow><mml:mrow><mml:mover><mml:mrow><mml:mi mathvariant="normal">k</mml:mi></mml:mrow><mml:mrow><mml:mo>→</mml:mo></mml:mrow></mml:mover></mml:mrow></mml:mrow><mml:mo>)</mml:mo></mml:math>, and electron and hole lifetimes for GaAs

1980 • 346 citations

Observation of a Relationship between Core-Level Line Shapes in Photoelectron Spectroscopy and the Localization of Screening Orbitals

1980 • 307 citations

Electronic surface properties of Ga and In containing III–V compounds

1977 • 231 citations

Work function variations of gallium arsenide cleaved single crystals

1975 • 169 citations

(110) surface states of GaAs: Sensitivity of electronic structure to surface structure

1978 • 161 citations

Angle-resolved photoemission from GaAs (110) surface states

1978 • 158 citations

Influence of volume dope on Fermi level position at gallium arsenide surfaces

1967 • 144 citations

Electronic surface properties of uhv-cleaved III–V compounds

1977 • 139 citations

Conduction-band dispersion, critical points, and unoccupied surface states on GaAs(110): A high-resolution angle-resolved inverse photoemission study

1985 • 97 citations

Electronic structure and atomic configuration at the cleavage surface of zincblende compounds

1977 • 77 citations

Investigation of Intrinsic Unoccupied Surface States at GaAs(110) by Isochromat Spectroscopy

1981 • 74 citations

Unoccupied surface states on metal surfaces as revealed by inverse photoemission

1985 • 71 citations

Unoccupied surface-state band on Si(111) 2×1

1987 • 67 citations

Surface structure and orbital symmetries of (110) surface states of GaAs

1978 • 64 citations

Optical-Emission Properties of Interface States for Metals on III-V Semiconductor Compounds

1986 • 53 citations

Experimental energy-band dispersions, critical points, and spin-orbit splittings for GaSb using angle-resolved photoemission

1980 • 52 citations

Intrinsic unoccupied surface states at GaAs(110)

1982 • 35 citations

Direct Observation of Adsorbate-Induced Band-Gap States on GaAs(110)

1986 • 35 citations

Angle-resolved inverse photoemission of GaP(110)

1987 • 27 citations

Dielectric functions of Si(111)2×1, Ge(111)2×1, GaAs(110) and GaP(110) surfaces obtained by polarized surface differential reflectivity

1987 • 26 citations

Study of III–V semiconductor band structure by synchrotron photoemission

1983 • 14 citations