Hall Effect of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type GaAs in High Electric Fields
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Abstract
References (18)
Microwave oscillations of current in III–V semiconductors
1963 • 668 citations
Band Structure and Electron Transport of GaAs
1960 • 459 citations
The Possibility of Negative Resistance Effects in Semiconductors
1961 • 394 citations
Instabilities of Current in III–V Semiconductors
1964 • 367 citations
Transferred Electron Amplifiers and Oscillators
1962 • 257 citations
The influence of interelectronic collisions on conduction and breakdown in polar crystals
1958 • 247 citations
High-field distribution function in GaAs
1966 • 167 citations
Calculation of the velocity-field characteristic for gallium arsenide
1966 • 139 citations
Mechanism of the Gunn Effect from a Pressure Experiment
1965 • 118 citations
The intervalley transfer mechanism of negative resistivity in bulk semiconductors
1965 • 110 citations
High-Temperature Hall Coefficient in GaAs
1960 • 69 citations
The Gunn effect in polar semiconductors
1966 • 68 citations
MICROWAVE OSCILLATIONS IN GaAsxP1-x ALLOYS
1965 • 62 citations
Properties of a Free, Steadily Travelling Electrical Domain in GaAs
1966 • 61 citations
Measurement of the negative differential mobility of electron in GaAs
1966 • 60 citations
Warm Electron Effect in Polar Semiconductor
1962 • 32 citations
High-field electron distribution in GaAs
1966 • 13 citations
Field dependence of mobility in the (100) conduction band minima of GaAs
1966 • 12 citations