Surface states from photoemission threshold measurements on a clean, cleaved, Si (111) surface

Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°K

1955 • 1,005 citations

Semiconductor Surfaces

1966 • 801 citations

Photoemissive, Photoconductive, and Optical Absorption Studies of Alkali-Antimony Compounds

1958 • 565 citations

Work Function, Photoelectric Threshold, and Surface States of Atomically Clean Silicon

1962 • 458 citations

Optical Absorption of Surface States in Ultrahigh Vacuum Cleaved (111) Surfaces of Ge and Si

1971 • 310 citations

Surface-State Transitions of Silicon in Electron Energy-Loss Spectra

1973 • 260 citations

Photoemission Densities of Intrinsic Surface States for Si, Ge, and GaAs

1972 • 256 citations

Observation of a Band of Silicon Surface States Containing One Electron Per Surface Atom

1972 • 246 citations

Electronic transitions of oxygen adsorbed on clean silicon (111) and (100) surfaces

1974 • 195 citations

Optical Spectrum of the Semiconductor Surface States from Frustrated Total Internal Reflections

1962 • 118 citations

Electronic characteristics of “real” CdS surfaces

1972 • 97 citations

Determination of surface state parameters from surface photovoltage transients: CdS

1972 • 78 citations

Relationship between Atomic Structure and Electronic Properties of (111) Surfaces of Silicon

1972 • 77 citations

Photoemission study of the effect of bulk doping and oxygen exposure on silicon surface states

1974 • 75 citations

Determination of Surface States at Clean, Cleaved Silicon Surfaces from Photoconductivity

1971 • 73 citations

Photovoltage inversion effect and its application to semiconductor surface studies: CdS

1971 • 65 citations

Photoemission measurement of surface states for annealed silicon

1974 • 61 citations

Determination of surface state energy positions by surface photovoltage spectrometry: CdS

1971 • 51 citations

Surface studies by modulation spectroscopy

1973 • 29 citations