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Low-energy electron diffraction studies of (100) and (111) surfaces of semiconducting diamond

Data up to Jan 2025

Published1964
Citations108
References14

Total Citations Per Year

Abstract

References (14)

Structure and Adsorption Characteristics of Clean Surfaces of Germanium and Silicon

1959 • 873 citations

Surface Structures and Properties of Diamond-Structure Semiconductors

1961 • 409 citations

Low-Energy Electron Diffraction Study of Silicon Surface Structures

1962 • 278 citations

Low Voltage Electron Diffraction Study of the Oxidation and Reduction of Silicon

1962 • 276 citations

Structures of Clean Surfaces of Germanium and Silicon. I

1963 • 242 citations

Application of the Ion Bombardment Cleaning Method to Titanium, Germanium, Silicon, and Nickel as Determined by Low-Energy Electron Diffraction

1958 • 220 citations

Ultra-High Vacuum. II. Limiting Factors on the Attainment of Very Low Pressures

1954 • 137 citations

Microcleavage, bonding character and surface structure in materials with tetrahedral coordination

1959 • 76 citations

Structure and adsorption characteristics of (111) and (11) surfaces of InSb cleaned by ion bombardment and annealing

1960 • 63 citations

Surface-structure and work-function determinations for Silicon crystals

1959 • 37 citations

Model for the (100) Surfaces of Silicon and Germanium

1962 • 26 citations

268. Sorption processes on diamond and graphite. Part I. Reactions with hydrogen

1936 • 25 citations

Tests with low-energy electron diffraction for adsorbed Hydrogen and Nickel Hydroxide formed on the (100) surface of a Nickel crystal at 25°C

1959 • 23 citations

269. Sorption processes on diamond and graphite. Part II. Reactions of diamond with oxygen, carbon dioxide, and carbon monoxide

1936 • 19 citations

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