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Phase transitions on the Ge(111) and Si(111) surfaces from core-level studies

Data up to Jan 2025

Published1990
Citations49
References20

Total Citations Per Year

Abstract

References (20)

Structural analysis of Si(111)-7×7 by UHV-transmission electron diffraction and microscopy

1985 • 1,302 citations

Origin of surface states on Si(111)(7×7)

1986 • 342 citations

Geometry-Dependent<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Si</mml:mi><mml:mn /><mml:mo>(</mml:mo><mml:mn>2</mml:mn><mml:mi>p</mml:mi><mml:mo>)</mml:mo><mml:mn /></mml:math>Surface Core-Level Excitations for Si(111) and Si(100) Surfaces

1980 • 335 citations

Dimer–adatom–stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2×8) to Si(111)-(2×2), -(5×5), -(7×7), and -(9×9) with scanning tunneling microscopy

1989 • 230 citations

Tunneling Images of Germanium Surface Reconstructions and Phase Boundaries

1985 • 200 citations

Electronic structure of the annealed Ge(111) and Si(111) surfaces: Similarities in local bonding

1981 • 149 citations

A LEED study of Ge(111); a high-temperature incommensurate structure

1985 • 121 citations

Surface structure and long-range order of the Ge(111)-c(2×8) reconstruction

1988 • 86 citations

Buckling Reconstruction on Laser-Annealed Si(111) Surfaces

1981 • 67 citations

Similarity of the laser- and thermally annealed Si(111) surfaces

1981 • 66 citations

Structure of Sn/Ge(111) from low-energy electron-diffraction and photoemission studies

1985 • 56 citations

Core-level study of the phase transition on the Ge(111)-c(2×8) surface

1988 • 55 citations

The effect of cooling rate on the surface reconstruction of annealed silicon(111) studied by scanning tunneling microscopy and low-energy electron diffraction

1988 • 44 citations

Structure determination of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Ge</mml:mi><mml:mn /><mml:mo>(</mml:mo><mml:mn>111</mml:mn><mml:mo>)</mml:mo><mml:mn /><mml:mo>−</mml:mo><mml:mi>c</mml:mi><mml:mo>(</mml:mo><mml:mn>2</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>8</mml:mn><mml:mo>)</mml:mo></mml:math>surface by medium-energy ion scattering

1988 • 44 citations

Photoemission studies of the initial adsorption and growth of Ag and Au on Ge and Si

1987 • 42 citations

Absolute Determination of Surface Core-Level Emission for Ge(100)-(2×1) and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Ge</mml:mi><mml:mn /><mml:mo>(</mml:mo><mml:mn>111</mml:mn><mml:mo>)</mml:mo><mml:mn /><mml:mo>−</mml:mo><mml:mi>c</mml:mi><mml:mo>(</mml:mo><mml:mn>2</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>8</mml:mn><mml:mo>)</mml:mo></mml:math>: Surface Reconstruction and Defects

1988 • 39 citations

Comparison of high-temperature and laser-quenched Si(111) using low-energy electron diffraction

1987 • 32 citations

New surface states on the annealed Ge(111) surface

1986 • 30 citations

Anomalous surface reconstruction: Observation of Si(111) 2×1 on sputtered and annealed Si(111) surfaces

1988 • 25 citations

Phonon coupling to core spectra in homopolar semiconductors

1989 • 13 citations

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