The kinetic aspects of ordering in GaAs1-xSbx grown by organometallic vapor phase epitaxy

Thermodynamics of solids

1962 • 1,127 citations

Practical electron microscopy in materials science

1976 • 698 citations

Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy

1987 • 434 citations

Calculation of ternary and quaternary III–V phase diagrams

1974 • 375 citations

Atomic structure and ordering in semiconductor alloys

1985 • 369 citations

Calculation of ternary and quaternary III–V phase diagrams

1974 • 266 citations

Ordered structures in GaAs0.5Sb0.5 alloys grown by organometallic vapor phase epitaxy

1986 • 244 citations

Molecular-beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy

1977 • 209 citations

Ternary and multinary compounds

1987 • 194 citations

Thermodynamics of solids

1962 • 181 citations

Spinodal decomposition and clustering in III/V alloys

1982 • 161 citations

(Institute of Physics Conference Series No. 142)

1997 • 138 citations

Growth and properties of liquid-phase epitaxial GaAs1−xSbx

1977 • 112 citations

GaAs1−xSbx growth by OMVPE

1984 • 86 citations

OMVPE growth of GaAs1-xSbx: solid composition

1983 • 82 citations

AlxGa1−xAsySb1−y phase diagram

1983 • 82 citations

The organometallic vpe growth of GaSb and GaAsl−xSbx using trimethylantimony

1982 • 76 citations

Organometallic vapor phase epitaxial growth of GaAs0.5Sb0.5

1984 • 71 citations

2015 Materials Research Society Spring Meeting

2016 • 65 citations

OMVPE growth of the metastable III/V alloy GaAs0.5Sb0.5

1986 • 60 citations

Liquid phase epitaxy of unstable alloys: Substrate-induced stabilization and connected effects

1983 • 55 citations

GaAs_1-xSb_x(0.3<x<0.9) Grown by Molecular Beam Epitaxy

1977 • 55 citations

Prediction of diffuse intensity surfaces in short-range-ordered ternary derivative structures based on SnS, NaCl, CsCl and other structures

1974 • 46 citations

Back-surface emitting GaAsxSb1−x LED’s (λ=1.0 μm) prepared by molecular-beam epitaxy

1977 • 36 citations

Growth of GaAs1−x Sbx by organometallic vapor phase epitaxy

1983 • 31 citations

Vacuum chemical epitaxy utilizing organometallic sources

1986 • 15 citations

Gallium arsenide antimonide: The possibility of lattice-matched LPE growth on InP substrates

1978 • 13 citations

Ta2O5 antireflection coatings for near-IR GaAs0.80Sb0.20 photodiodes

1986 • 2 citations