Strongly anisotropic field ionization of a common deep level in GaAs

Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

1974 • 3,582 citations

Field and thermionic-field emission in Schottky barriers

1966 • 1,293 citations

Electron traps in bulk and epitaxial GaAs crystals

1977 • 731 citations

Self-Consistent Green's-Function Calculation of the Ideal Si Vacancy

1978 • 314 citations

The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs

1978 • 147 citations

Photocapacitance quenching effect for “oxygen” in GaAs

1978 • 130 citations

Trap depth and electron capture cross section determination by trap refilling experiments in Schottky diodes

1978 • 105 citations

Net Optical Quenching Spectrum and Disappearance of Stationary High-Field Domain in GaAs: Cr single Crystal

1978 • 4 citations