Limitations of the direct-indirect transition on In1−xGaxP1−zAsz heterojunctions

Radiative recombination mechanisms in GaAsP diodes with and without nitrogen doping

1972 • 170 citations

Effect of Te and S Donor Levels on the Properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Ga</mml:mi><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">P</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>…

1968 • 143 citations

Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxP

1976 • 122 citations

Vapor phase epitaxial materials for LED applications

1973 • 99 citations

Free-exciton transitions in the optical absorption spectra of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Ga</mml:mi><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">P</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml…

1976 • 67 citations

Liquid phase epitaxial growth and photoluminescence characterization of laser-quality (100) In1−xGaxP

1974 • 57 citations

Pulsed room-temperature operation of In1−xGaxP1−zAsz double heterojunction lasers at high energy (6470 Å, 1.916 eV)

1976 • 55 citations

Low-threshold LPE In1−x′Gax′P1−z′ Asz′/In1−xGaxP1−zAsz/In1− x′ Gax′P1−z′Asz′ yellow double-heterojunction laser diodes (J&amp;lt;104 A/cm2, λ∼5850 Å, 77 °K)

1975 • 46 citations

Yellow In1−xGaxP1−zAsz double-heterojunction lasers

1976 • 44 citations

Crystal and luminescence properties of constant-temperature liquid-phase-expitaxial In1−xGaxP (x [inverted lazy s]0.7) grown on (100) GaAs1−xPx (x [inverted lazy s]0.4)

1973 • 39 citations

Resonant enhancement (?) of the recombination probability at the nitrogen-trap, Γ-band edge crossover in GaAs1−xPx: N(EN = EΓ, x ≡ xN)

1975 • 18 citations

The direct-indirect transition in In1−xGaxP

1974 • 16 citations

Heterojunction laser operation of N-free and N-doped GaAs1−yPy (y=0.42–0.43, λ∼6200 Å, 77 °K) near the direct-indirect transition (y∼y c?0.46)

1975 • 14 citations

In1−xGaxP1−zAsz double-heterojunction-laser operation (77 °K, yellow) in an external grating cavity

1976 • 11 citations

Pressure experiment determination of the direct-indirect transition in the quarternary In1−xGaxP1−zAsz

1976 • 8 citations

New Method of Measuring the Cathode Temperature of Indirectly Heated Vacuum Tubes

1954 • 4 citations