Dislocation studies in 3-inch diameter liquid encapsulated Czochralski GaAs

Physical Metallurgy Principles

1972 • 2,134 citations

A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs Crystals

1980 • 344 citations

Stoichiometry-controlled compensation in liquid encapsulated Czochralski GaAs

1982 • 294 citations

Oxygen Content of Silicon Single Crystals

1957 • 250 citations

Impurity effect on grown-in dislocation density of InP and GaAs crystals

1978 • 233 citations

An evaluation of the thermal and elastic constants affecting GaAs crystal growth

1980 • 147 citations

Effect of doping on formation of dislocation structure in semiconductor crystals

1981 • 64 citations

Growth of high-purity semi-insulating bulk GaAs for integrated-circuit applications

1981 • 61 citations

Electron Trap‐Free Low Dislocation Melt‐Grown GaAs

1981 • 43 citations

Growth of Dislocation-Free Undoped InP Crystals

1980 • 42 citations

Growth and characterization of large diameter undoped semi-insulating GaAs for direct ion implanted FET technology

1981 • 41 citations

Creation of defects during the growth of semiconductor single crystals and films

1978 • 39 citations

Dislocation-free GaAs by the liquid encapsulation technique

1972 • 38 citations

Effect of Arsenic Pressure on Dislocation Densities in Melt-grown Gallium Arsenide

1966 • 28 citations

An analysis of factors affecting dislocation densities in pulled crystals of gallium arsenide

1970 • 26 citations

Etch pits and dislocations in {100} GaAs wafers

1975 • 25 citations

Growth of dislocation-free gallium-phosphide crystals from a stoichiometric melt

1977 • 24 citations