Back to search

Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application

Data up to Jan 2025

Published2000
Citations169
References14

Total Citations Per Year

Abstract

References (14)

Thermodynamic stability of binary oxides in contact with silicon

1996 • 1,213 citations

Crystalline Oxides on Silicon: The First Five Monolayers

1998 • 972 citations

Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

1999 • 500 citations

Structural properties and quasiparticle band structure of zirconia

1998 • 338 citations

Modification of the optical and structural properties of dielectric ZrO2 films by ion-assisted deposition

1984 • 239 citations

Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

1999 • 164 citations

Thin films of metal oxides on silicon by chemical vapor deposition with organometallic compounds. I

1972 • 138 citations

ZrO 2 film growth by chemical vapor deposition using zirconium tetra- tert- butoxide

1999 • 127 citations

The chemical vapour deposition and characterization of ZrO2 films from organometallic compounds

1977 • 125 citations

The Characteristics of Growth of Films of Zirconium and Hafnium Oxides (ZrO2, HfO2) by Thermal Decomposition of Zirconium and Hafnium β‐Diketonate Complexes in the Presence and Absence of Oxygen

1979 • 83 citations

Investigation of MOS capacitors with thin ZrO2layers and various gate materials for advanced DRAM applications

1986 • 76 citations

Fabrication and characterization of Si-MOSFET's with PECVD amorphous Ta2O5 gate insulator

1997 • 72 citations

Deposition and characterization of ZrO2 thin films on silicon substrate by MOCVD

1993 • 57 citations

Reactive magnetron sputtered zirconium oxide and zirconium silicon oxide thin films

1989 • 57 citations

Cited By (0)

Loading...