Si(001)-2×1 Single-Domain Structure Obtained by High Temperature Annealing

Structure and Adsorption Characteristics of Clean Surfaces of Germanium and Silicon

1959 • 873 citations

LEED study of the stepped surface of vicinal Si (100)

1980 • 234 citations

Intensity oscillations of reflection high-energy electron diffraction during silicon molecular beam epitaxial growth

1985 • 211 citations

On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende-on-diamond systems

1980 • 117 citations

Double diffraction spots in RHEED patterns from clean Ge(111) and Si(001) surfaces

1979 • 62 citations