On the location of the misfit dislocations in InGaAs/InP mbe single heterostructures
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Abstract
References (21)
Determination of the lattice constant of epitaxial layers of III-V compounds
1978 • 489 citations
X-ray double-crystal diffractometry of Ga1−xAlxAs epitaxial layers
1978 • 238 citations
Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxy
1985 • 173 citations
New InGaAs/InP avalanche photodiode structure for the 1-1.6 µm wavelength region
1980 • 93 citations
A high gain In0.53Ga0.47As/InP avalanche photodiode with no tunneling leakage current
1981 • 59 citations
High-speed-response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers
1982 • 59 citations
Lattice deformations and misfit dislocations in GaInAsP/InP double-heterostructure layers
1978 • 56 citations
Lattice Mismatch Study of LPE‐Grown InGaPAs on ( 001 ) ‐ InP Using X‐Ray Double‐Crystal Diffraction
1979 • 52 citations
Misfit dislocation-free In1−xGaxAs1−yPy/InP heterostructure wafers grown by liquid phase epitaxy
1981 • 42 citations
Low dark-current, high-efficiency planar In0.53Ga0.47As/InP P-I-N photodiodes
1981 • 36 citations
Lattice deformation and misorientation of InxGa1−xAs epitaxial layers grown on InP substrates by molecular-beam epitaxy
1979 • 33 citations
Characterization of Ga0.47In0.53As and Al0.48In0.52As layers grown lattice matched on InP by molecular beam epitaxy
1983 • 28 citations
Misfit dislocations in InP/InGaAsP/InP double-heterostructure wafers grown by liquid phase epitaxy
1982 • 27 citations
Planar type vapor-phase epitaxial In0.53Ga0.47As photodiode
1980 • 23 citations
Degradation of 1.3-μm InP/InGaAsP light-emitting diodes with misfit dislocations
1983 • 17 citations
Effect of InP substrate thermal degradation on MBE InGaAs layers
1984 • 15 citations
1.0–1.6 μm planar avalanche photodiode by LPE grown InP/InGaAs/InP DH structure
1982 • 12 citations
Misfit dislocations in (111)A InP/In0.53Ga0.47As/InP double heterostructure wafers grown by liquid phase epitaxy
1984 • 8 citations
Planar In0.53Ga0.47As Avalanche Photodiodes with Guard-Ring Structure
1980 • 5 citations
Growth of In. 53Ga. 47as layers on InP substrates for I.R. detectors by MBE
1984 • 4 citations
Evaluation of misfit dislocations in planar, zinc-diffused In0.53Ga0.47As pin photodiodes
1983 • 4 citations